SKU:79457970818
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10x10x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
01 Melting point
Orientation: C-axis[0001]( +-0
and twins If your application is very sensitive to the defects
Coating width: 120 mm
3 Deg) with Standard Flat
we will forward your inquiry to the manufacturer
Warning Please don't use an alumina tube under a vacuum at a temperature > 1500 oC
Will chip or break when exhausted
Surface Polishing: one side epi polished
MET Certification is available upon request at extra cost
50/60 Hz Power consumption 120W Ultimate pressure with gas ballast
Warranty One year limited warranty with lifetime technical support Operation Instruction
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