GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp

GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 spGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 100mm dia x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 52 2. 19)E8 ohm. cm Carrier Concentration: N A Mobility: (5690 5970) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers

MTI Corporation provides the high purity quartz tube as replacement part for Three Zone Rotary Tube Furnace

Sample size 50mm(L) x 25mm(W) x 2

Index of Refraction

Aluminum foil (JIS A8021):                       0

driven gas crimper is not going to contaminate the high purity glove box atmosphere if the crimper is driven by the corresponding glove box gas

Cu coated Si Wafer ( 10x5 mm size )

Mcdanel strongly recommends keeping ramp rate less than 100oC/ hour at 400 - 1700 oC range

1mm Cutting Pressure Force Max

Patent Granted: 201220296271

Impregnated diamond blade with Wear-resistant TiC coating

1    Pic

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