SKU:28100531474

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

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Regular price $103.44 USD
Regular price $134.44 USD Sale price $103.44 USD
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21

Description

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 10 x 0. 3 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration:(2. 49 3. 27)x10^18 c. c Mobility: 1630 1870cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Aluminium Powder

Single crystal copper metallic substrate

Polish:             two sides EPI polished with surface roughness  Ra< 5 A ( measured by AFM  5x5

8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (pls click a picture below 1-2 to enlarge)

Orientation:                  <111> +/-0

please cut it together with an A4 paper for a better result

Standard compounds handle operating temperatures -85º to +400ºF

Wafer size:   3" dia x  0

0 mA to 12 A

Application Notes You may use the liquid rubber to seal the sample to be CIP ( click Pic below to order )

Wafer size: 100 mm dia x 0

EPD :<10^4/cm2

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