SKU:12621552491
BFW10 N-Channel Depletion JFET
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 17 - Jul 22
Description
BFW10 N-Channel Depletion JFETThe BFW10 by Philips is a silicon N channel junction field effect transistor (JFET) designed for low level RF and mixer applications. It features a low noise figure and high gain, making it ideal for use in VHF UHF amplifiers and oscillators. This transistor is well suited for radio frequency and communication systems. Specification Description Value Drain source voltage (VDS) 30 V Drain gate voltage (Open source) ( VDGO) 30 V Gate source voltage
Moisture Displacement
light/dark sensing and commonly used in robotics application
BASIC INFORMATION
Width : 105mm
Charger input: 9-18V
Lugs soldering
ATMEL 89 S 51
Starting Torque 35mN·m
hold & resume operations
it ensures optimal performance in demanding industrial environments
Max Traveling Speed: 180mm/s
Interface: I2C or SPI interface for easy integration
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- Fast: 2-3 business days
- Express: 1-2 business days
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